| STMicroelectronics |
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- - 0.35um SiGe-BiCMOS (BiCMOS6G):
- SiGe-Bipolar(NPN) fT=45GHz, V-PNP fT=4GHz
- - 0.25um SiGe-BiCMOS (BiCMOS7RF):
- SiGe-Bipolar(NPN) fT=70GHz, V-PNP fT=6GHz
- Power-Tr for RF, Low noise Tr for LNA
- - 0.13um SiGe-BiCMOS (BiCMOS9):
- SiGe-Bipolar(NPN) fT=160GHz, BVCEO=1.7V
- - 0.13um SiGe-BiCMOS (HCMOS9SiGe):
- SiGe-Bipolar(NPN) fT=45GHz, BVCEO=4V
- *We also will be able to use 90nm and 45nm technologies.
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| TSMC |
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- - 0.18um SiGe-BiCMOS (BiCMOS6G):
- SiGe-Bipolar(NPN) fT=65GHz, V-PNP fT=8GHz
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